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Bürkle, Heiko

Heiko Bürkle

M. Sc.

Akademischer Mitarbeiter
Institut für Intelligente Sensorik und Theoretische Elektrotechnik

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+49 711 685 67262
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Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Raum: 3.139

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Die Arbeitsgebiete finden Sie auf der englischen Version dieser Seite.

Publikationen

Zeitschriften, Konferenzen und Bücher:

2021
1. H. Bürkle, T. Klotz, R. Krapf, und J. Anders, „A 0.1 MHz to 200 MHz high-voltage CMOS transceiver for portable NMR systems with a maximum output current of 2.0 A<inf>pp</inf>“, in ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), Sep. 2021, S. 327–330. doi: 10.1109/ESSCIRC53450.2021.9567823.
  - BibTeX
  - DOI
  BibTeX
  @inproceedings{9567823, abstract = {This paper presents a single-chip high-voltage transceiver ASIC for low-field NMR spectroscopy. The chip integrates an adjustable high-voltage (HV) H-bridge power amplifier (PA) with a PLL frequency synthesizer and a quadrature low intermediate frequency (low-IF) receiver, achieving a measured input-referred voltage noise density of 1.1 nV / ✓Hz. The operating frequency of the chip is from 0.1 MHz to 200 MHz, supporting all relevant Larmor frequencies for low-field mobile and portable NMR. The PA consists of four isolated 50 V NMOS transistors, isolated gate drivers with a digitally adjustable deadtime control, high-frequency level shifters, and a TX-control logic that supports bootstrapping of the integrated high-side drivers. The output current can be defined by an adjustable voltage supply from 0 V to 50 V, delivering a maximum current of 2.0 App into a non-tuned 3 mm NMR coil and up to 8.3 App into a parallel tuned NMR coil. Inside a custom-designed 1.1 T portable NMR magnet, the system achieves a spin sensitivity of 1.1 × 10<sup>16</sup>spins/ ✓Hz and a concentration sensitivity of 1mM/✓Hz.}, author = {Bürkle, Heiko and Klotz, Tobias and Krapf, Reiner and Anders, Jens}, booktitle = {ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)}, doi = {10.1109/ESSCIRC53450.2021.9567823}, month = {09}, pages = {327-330}, title = {A 0.1 MHz to 200 MHz high-voltage CMOS transceiver for portable NMR systems with a maximum output current of 2.0 A<inf>pp</inf>}, year = 2021 }
  DOI
  10.1109/ESSCIRC53450.2021.9567823
2020
1. H. Bürkle, K. Schmid, T. Klotz, R. Krapf, und J. Anders, „A High Voltage CMOS Transceiver for Low-Field NMR with a Maximum Output Current of 1.4 App“, in 2020 IEEE International Symposium on Circuits and Systems (ISCAS), Okt. 2020, S. 1–5. doi: 10.1109/ISCAS45731.2020.9181025.
  BibTeX
  @inproceedings{9181025, abstract = {In this paper, we present a fully integrated transceiver ASIC for low field NMR spectroscopy. The chip integrates a conventional low intermediate frequency (low-IF) receiver together with a high-voltage (HV) H-bridge power amplifier (PA) and a PLL frequency synthesizer. The receiver consists of a low noise amplifier (LNA), a quadrature down-conversion mixer and a baseband amplifier. It achieves a measured input-referred voltage noise density of 1.1 nV/√Hz;. The integrated PLL frequency synthesizer supports operating frequencies between 4 MHz and 100 MHz, covering all relevant Larmor frequencies of benchtop and portable NMR. The on-chip PA can drive up to 1.4 App into a 1Ω resistor and 1.6 App into a 3mm, parallel-tuned NMR coil. When operating with a 3mm NMR coil inside a 1.45T unshimmed NMR magnet, the system achieves a spin sensitivity of 9.2 × 1015 spins/√Hz and a concentration sensitivity of 1.79 mM/√Hz.}, author = {{Bürkle}, H. and {Schmid}, K. and {Klotz}, T. and {Krapf}, R. and {Anders}, J.}, booktitle = {2020 IEEE International Symposium on Circuits and Systems (ISCAS)}, doi = {10.1109/ISCAS45731.2020.9181025}, issn = {2158-1525}, month = {10}, pages = {1-5}, title = {A High Voltage CMOS Transceiver for Low-Field NMR with a Maximum Output Current of 1.4 App}, url = {https://ieeexplore.ieee.org/document/9181025/}, year = 2020 }
  Link
  https://ieeexplore.ieee.org/document/9181025/
  DOI
  10.1109/ISCAS45731.2020.9181025

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Heiko Bürkle

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