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Klotz, Tobias

Tobias Klotz

M. Sc.

Akademischer Mitarbeiter
Institut für Intelligente Sensorik und Theoretische Elektrotechnik

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+49 711 685 67281
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Pfaffenwaldring 47
70569 Stuttgart
Deutschland
Raum: 4.111

Publikationen

Zeitschriften, Konferenzen und Bücher:

2023
1. M. Kern, T. Klotz, M. Spiess, P. Mavridis, B. Blümich, und J. Anders, „Dead Time-Free Detection of NMR Signals Using Voltage-Controlled Oscillators“, Applied Magnetic Resonance, Aug. 2023, doi: 10.1007/s00723-023-01599-8.
  BibTeX
  @article{Kern2023, abstract = {In this paper, we introduce voltage-controlled oscillators (VCOs) as a new type of nuclear magnetic resonance (NMR) detector, enabling dead time-free detection of NMR signals after an excitation pulse as well as the real-time inductive detection of Rabi oscillations during the pulse. Together with the theory of operation, we present the details of a custom-designed prototype implementation of a VCO-based NMR detector with an operating frequency around 62 MHz. The proof-of-concept measurements obtained with this prototype clearly demonstrate the possibility of performing dead time-free NMR experiments with coherent spin manipulation. Moreover, we also experimentally verified the capability of VCO-based detectors for performing real-time inductive detection of Rabi oscillations during the excitation pulse.}, author = {Kern, Michal and Klotz, Tobias and Spiess, Maximilian and Mavridis, Petros and Bl{\"u}mich, Bernhard and Anders, Jens}, day = 29, doi = {10.1007/s00723-023-01599-8}, issn = {1613-7507}, journal = {Applied Magnetic Resonance}, month = {08}, title = {Dead Time-Free Detection of NMR Signals Using Voltage-Controlled Oscillators}, url = {https://doi.org/10.1007/s00723-023-01599-8}, year = 2023 }
  Link
  https://doi.org/10.1007/s00723-023-01599-8
  DOI
  10.1007/s00723-023-01599-8
2021
1. H. Bürkle, T. Klotz, R. Krapf, und J. Anders, „A 0.1 MHz to 200 MHz high-voltage CMOS transceiver for portable NMR systems with a maximum output current of 2.0 A<inf>pp</inf>“, in ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), in ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC). Sep. 2021, S. 327–330. doi: 10.1109/ESSCIRC53450.2021.9567823.
  - BibTeX
  - DOI
  BibTeX
  @inproceedings{9567823, abstract = {This paper presents a single-chip high-voltage transceiver ASIC for low-field NMR spectroscopy. The chip integrates an adjustable high-voltage (HV) H-bridge power amplifier (PA) with a PLL frequency synthesizer and a quadrature low intermediate frequency (low-IF) receiver, achieving a measured input-referred voltage noise density of 1.1 nV / ✓Hz. The operating frequency of the chip is from 0.1 MHz to 200 MHz, supporting all relevant Larmor frequencies for low-field mobile and portable NMR. The PA consists of four isolated 50 V NMOS transistors, isolated gate drivers with a digitally adjustable deadtime control, high-frequency level shifters, and a TX-control logic that supports bootstrapping of the integrated high-side drivers. The output current can be defined by an adjustable voltage supply from 0 V to 50 V, delivering a maximum current of 2.0 App into a non-tuned 3 mm NMR coil and up to 8.3 App into a parallel tuned NMR coil. Inside a custom-designed 1.1 T portable NMR magnet, the system achieves a spin sensitivity of 1.1 × 10<sup>16</sup>spins/ ✓Hz and a concentration sensitivity of 1mM/✓Hz.}, author = {Bürkle, Heiko and Klotz, Tobias and Krapf, Reiner and Anders, Jens}, booktitle = {ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC)}, doi = {10.1109/ESSCIRC53450.2021.9567823}, month = {09}, pages = {327-330}, title = {A 0.1 MHz to 200 MHz high-voltage CMOS transceiver for portable NMR systems with a maximum output current of 2.0 A<inf>pp</inf>}, year = 2021 }
  DOI
  10.1109/ESSCIRC53450.2021.9567823
2020
1. H. Bürkle, K. Schmid, T. Klotz, R. Krapf, und J. Anders, „A High Voltage CMOS Transceiver for Low-Field NMR with a Maximum Output Current of 1.4 App“, in 2020 IEEE International Symposium on Circuits and Systems (ISCAS), in 2020 IEEE International Symposium on Circuits and Systems (ISCAS). Okt. 2020, S. 1–5. doi: 10.1109/ISCAS45731.2020.9181025.
  BibTeX
  @inproceedings{9181025, abstract = {In this paper, we present a fully integrated transceiver ASIC for low field NMR spectroscopy. The chip integrates a conventional low intermediate frequency (low-IF) receiver together with a high-voltage (HV) H-bridge power amplifier (PA) and a PLL frequency synthesizer. The receiver consists of a low noise amplifier (LNA), a quadrature down-conversion mixer and a baseband amplifier. It achieves a measured input-referred voltage noise density of 1.1 nV/√Hz;. The integrated PLL frequency synthesizer supports operating frequencies between 4 MHz and 100 MHz, covering all relevant Larmor frequencies of benchtop and portable NMR. The on-chip PA can drive up to 1.4 App into a 1Ω resistor and 1.6 App into a 3mm, parallel-tuned NMR coil. When operating with a 3mm NMR coil inside a 1.45T unshimmed NMR magnet, the system achieves a spin sensitivity of 9.2 × 1015 spins/√Hz and a concentration sensitivity of 1.79 mM/√Hz.}, author = {{Bürkle}, H. and {Schmid}, K. and {Klotz}, T. and {Krapf}, R. and {Anders}, J.}, booktitle = {2020 IEEE International Symposium on Circuits and Systems (ISCAS)}, doi = {10.1109/ISCAS45731.2020.9181025}, issn = {2158-1525}, month = {10}, pages = {1-5}, title = {A High Voltage CMOS Transceiver for Low-Field NMR with a Maximum Output Current of 1.4 App}, url = {https://ieeexplore.ieee.org/document/9181025/}, year = 2020 }
  Link
  https://ieeexplore.ieee.org/document/9181025/
  DOI
  10.1109/ISCAS45731.2020.9181025

Tobias Klotz

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